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DL221

optical fiber transmitting IC

厂商名称:Silicon Touch Technology Inc.

厂商官网:http://www.siti.com.tw/

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42-DL221
Version
Issue Date
File Name
Total Pages
: A.005
: 2004/03/02
: SP-DL221-A.005.doc
:6
Optical Fiber Transmitting IC
新竹市科學園區展業一路
9
7
樓之 1
SILICON TOUCH TECHNOLOGY INC.
9-7F-1, Prosperity Road I, Science Based Industrial Park,
Hsin-Chu, Taiwan 300, R.O.C.
Fax:886-3-5645626
Tel:886-3-5645656
點晶科技股½有限公司
SILICON TOUCH TECHNOLOGY INC.
42-DL221
42-DL221
OPTICAL FIBER TRANSMITTING IC
GENERAL DESCRIPTION
42-DL221 is a driver IC designed for the application of high-speed optical fiber
transmission. It integrates the LED driver with constant current output to reduce the complexity
and the cost of the transmission module. 42-DL221 can transmit with the speed up to 25Mb/s.
42-DL221 are fabricated by using CMOS technology with low power consumption purpose.
FEATURES
1. TTL interface compatible
2. High speed (up to 25Mb/s)
3. Uniform output waveform
4. Constant current output
5. Low power consumption
6. Wide range for Supply Voltage (2.7V-5.5V)
BLOCK DIAGRAM And APPLICATION CIRCUIT
Power
42-DL221
VDD
OUT
Signal
IN
VSS
Ground
SP-DL221-A.005.doc
-1-
Version
A.005
點晶科技股½有限公司
SILICON TOUCH TECHNOLOGY INC.
42-DL221
ABSOLUTE MAXIMUM RATINGS
Item
Supply Voltage
Input Voltage
Operating Temperature
Storage Temperature
Electrostatic Damage
Output Voltage
Symbol
V
DD
V
IN
Topr
Tstg
ESD
V
OUT
Rating
-0.5 to +6.5
-0.5 to V
DD
+0.5
-40 to +85
-55 to +100
HBM class 3
-0.5 to V
DD
+0.5
V
Unit
V
V
RECOMMENDED OPERATING CONDITIONS
ITEM
Supply Voltage
High Level Input Voltage
Low Level Input Voltage
SYMBOL
V
DD
V
IH
V
IL
MIN.
2.7
2
0
TYP.
-
-
-
MAX. UNIT
5.5
V
DD
0.8
V
V
V
ELECTRICAL CHARACTERISTICS (V
DD
=5V, TA=25℃, if not mentioned )
ITEM
High Level Input Voltage
Low Level Input Voltage
Input Leakage Current
Quiescent Supply Current
Output Sinking Current
Output bias Current
Propagation Delay
Rise Time, Fall Time of
I
OUT
Pulse Width Distortion
SYMBOL
V
IH
V
IL
I
IN
I
DDQ
I
OUT_ON
I
B
T
PLH
, T
PHL
CONDITIONS
-
-
V
IN
=V
DD
or V
SS
V
IN
=V
DD
V
IN
=V
DD
V
FLED
=
1.8V
V
OUT
= V
DD
V
IN
=V
SS
V
FLED
=
1.8V
MIN.
2.0
0
-
-
2.4
-
-
TYP.
-
-
-
0.5
3
0.14
-
MAX. UNIT
V
DD
0.8
1
-
3.6
-
40
V
V
uA
mA
mA
mA
ns
T
r
, T
f
Δ
tw
Δ
tj
V
FLED
=
1.8V
-
-
9
ns
V
FLED
=
1.8V
-8
0
8
ns
Jitter of Output Current
V
FLED
=
1.8V
NRZ Code,
V
FLED
=
1.8V
1
-
ns
Data Rate
F
DATA
-
-
25
Mb/s
SP-DL221-A.005.doc
-2-
Version
A.005
點晶科技股½有限公司
SILICON TOUCH TECHNOLOGY INC.
42-DL221
PAD DESCRIPTIONS
PAD NO.
1
2
3
4
PAD NAME
IN
VDD
OUT
VSS
DESCRIPTIONS
Input Pad(Active High )
Supply Voltage
Output Pad Sinking Current(Active Low)
Ground
DIE CONFIGURATION
(522.2, 499.6)
IN
2
VDD
Center (93.6, 406)
1
IN
Center (363.8, 406)
3
OUT
Center (151, 99.8)
4
VSS
Center (427.9,101.2)
(0, 0)
Unit:um
Die Size: 522.2*499.6um
Die Thickness: 15mil(≒375um)
Pad Size: 100um * 100um
* Note:
SiTI reserves the right to improve the device geometry and manufacturing
processes without prior notice. Though these improvements may result in
slight geometry changes, they will not affect die electrical characteristics
and pad layouts.
SP-DL221-A.005.doc
-3-
Version
A.005
點晶科技股½有限公司
SILICON TOUCH TECHNOLOGY INC.
42-DL221
REQUIREMENTS FOR WAFER DELIVERY
Material: Silicon with P-Substrate
Diameter: 6 inches(≒15cm)
Thickness: 15 mils(≒375um)
Malfunctioned die:Marked with red ink or equivalent marking
HANDLING RECOMMENDATION FOR STATIC ELECTRICITY PROTECTION
(1) Avoid any circumstance that produce static electricity, e.g. rubbing against plastic, during
moving, storing and processing 42-DL221.
(2) Process 42-DL221 in a clean room with proper temperature and humidity.
(3) Ground all working machines and workers wear anti-electrostatic ring to ground during
processing.
(4) Avoid contact 42-DL221 with bare hands .If unavoided, wear anti-electrostatic ring and use
anti-electrostatic tool to pick it up.
GUARANTED TEMPERATURE AND RETENTION CYCLE
(1) The device/wafer 42-DL221 should be stored in the nitrogenous chest. The conditions suggested
are as follows:
Temperature = 23±3℃
Relative Humidity = 50±10%
Minimum nitrogen inflow = 3 liters/minute
(2) If the device/wafer, 42-DL221 is incidentally exposed to the air, use it for manufacturing as soon
as possible.
(3) Under the storage environment specified in item (1), six-month safe storage period is
guaranteed.
SP-DL221-A.005.doc
-4-
Version
A.005
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